? semiconductor components industries, llc, 2000 october, 2000 rev. 1 1 publication order number: mbr2030ctl/d mbr2030ctl preferred device switchmode ? dual schottky power rectifier . . . employing the schottky barrier principle in a large area metaltosilicon power diode. stateoftheart geometry features epitaxial construction with oxide passivation and metal overlay contact. ideally suited for use as rectifiers in very lowvoltage, highfrequency switching power supplies, free wheeling diodes and polarity protection diodes. ? highly stable oxide passivated junction ? very low forward voltage drop (0.4 max @ 10 a, t c = 150 c) ? 150 c operating junction temperature ? matched dual die construction (10 a per leg or 20 a per package) ? high junction temperature capability ? high dv/dt capability ? excellent ability to withstand reverse avalanche energy transients ? guardring for stress protection ? epoxy meets ul94, vo at 1/8 mechanical characteristics: ? case: epoxy, molded ? weight: 1.9 grams (approximately) ? finish: all external surfaces corrosion resistant and terminal leads are readily solderable ? lead temperature for soldering purposes: 260 c max. for 10 seconds ? shipped 50 units per plastic tube ? marking: b2030 maximum ratings please see the table on the following page http://onsemi.com 1 3 2, 4 schottky barrier rectifier 20 amperes 30 volts device package shipping ordering information mbr2030ctl to220 50 units/tube preferred devices are recommended choices for future use and best overall value. to220ab case 221a plastic 3 4 1 2 marking diagram b2030 b2030 = device code
mbr2030ctl http://onsemi.com 2 maximum ratings (per leg) rating symbol val e unit rating symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 30 volts average rectified forward current i f(av) 10 amps nonrepetitive peak surge current (surge applied at rated load conditions halfwave, single phase, 60 hz) i fsm 150 amps peak repetitive reverse surge current (2.0 m s, 1.0 khz) i rrm 1.0 amp operating junction temperature t j 65 to +150 c storage temperature t stg 65 to +175 c voltage rate of change (rated v r ) dv/dt 1000 v/ m s thermal characteristics (per leg) thermal resistance, junction to case r q jc 2.0 c/w electrical characteristics (per leg) maximum instantaneous forward voltage (note 1.) (i f = 10 amps, t c = 25 c) (i f = 10 amps, t c = 150 c) (i f = 20 amps, t c = 25 c) (i f = 20 amps, t c = 150 c) v f 0.52 0.40 0.58 0.48 volts maximum instantaneous reverse current (note 1.) (rated dc voltage, t c = 25 c) (rated dc voltage, t c = 100 c) (rated dc voltage, t c = 125 c) i r 5.0 40 75 ma 1. pulse test: pulse width = 5.0 ms, duty cycle 10%.
mbr2030ctl http://onsemi.com 3 v f, instantaneous voltage (volts) 0.2 0 0.6 0.4 0.8 30 0.1 0.3 0.2 2 1 100 20 10 1 3 0.5 5 50 i , instantaneous forward current (amps) f 150 c 100 c t j = 25 c 1.2 1.4 v r reverse voltage (volts) 015 10 25 30 40 100 0.01 0.04 0.02 0.1 0.4 0.2 20 10 4 2 1 t j = 150 c i , reverse current (ma) r 52035 t j = 100 c t j = 25 c t a , ambient temperature ( c) 020 1 2 3 4 5 i , average forward current (amps) f (av) 0 6 7 8 9 10 40 60 80 100 120 140 160 180 200 t c case temperature ( c) 120 150 140 0 4 2 6 10 8 16 14 12 rated voltage applied r jc = 2 c/w i , forward current (amps) f(av) 130 16 0 dc square wave rated voltage applied r ja = 16 c/w r ja = 60 c/w (n0 heatsink) dc square wave dc 02 1 2 3 4 5 0 6 7 8 46810121416 square wave i f(avg) , average forward current (amps) i , average forward power dissipation (watts) f(ave) 20 10 5 dc i pk i av sine wave tj = 100 c figure 1. typical forward voltage (per leg) figure 2. typical reverse current (per leg) figure 3. current derating, case figure 4. current derating, ambient figure 5. forward power dissipation
mbr2030ctl http://onsemi.com 4 high frequency operation since current flow in a schottky rectifier is the result of majority carrier conduction, it is not subject to junction diode forward and reverse recovery transients due to minor- ity carrier injection and stored charge. satisfactory circuit analysis work may be performed by using a model consist- ing of an ideal diode in parallel with a variable capacitance. (see figure 6.) rectification efficiency measurements show that opera- tion will be satisfactory up to several megahertz. for exam- ple, relative waveform rectification efficiency is approxi- mately 70 percent at 2.0 mhz, e.g., the ratio of dc power to rms power in the load is 0.28 at this frequency, whereas perfect rectification would yield 0.406 for sine wave inputs. however, in contrast to ordinary junction diodes, the loss in waveform efficiency is not indicative of power loss; it is simply a result of reverse current flow through the diode ca- pacitance, which lowers the dc output voltage. 2 m s 1 khz 12 v 100 v cc 12 vdc 2n2222 current amplitude adjust 0-10 amps 100 carbon 2n6277 1 carbon 1n5817 d.u.t. 2 k w +150 v, 10 madc 4 m f + 0.5 2 10k 200 300 1000 500 100 3 5 10 20 30 50 v r , reverse voltage (volts) c, capacitance (pf) figure 6. typical capacitance 1 2000 3000 5000 tj = 25 c f = 1 mhz figure 7. test circuit for dv/dt and reverse surge current
mbr2030ctl http://onsemi.com 5 package dimensions notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.147 3.61 3.73 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.018 0.025 0.46 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane t c s t u r j to220ab case 221a09 issue aa
mbr2030ctl http://onsemi.com 6 notes
mbr2030ctl http://onsemi.com 7 notes
mbr2030ctl http://onsemi.com 8 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information central/south america: spanish phone : 3033087143 (monfri 8:00am to 5:00pm mst) email : onlitspanish@hibbertco.com tollfree from mexico: dial 018002882872 for access then dial 8662979322 asia/pacific : ldc for on semiconductor asia support phone : 3036752121 (tuefri 9:00am to 1:00pm, hong kong time) toll free from hong kong & singapore: 00180044223781 email : onlitasia@hibbertco.com japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. mbr2030ctl/d switchmode is a trademark of semiconductor components industries, llc. north america literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com fax response line: 3036752167 or 8003443810 toll free usa/canada n. american technical support : 8002829855 toll free usa/canada europe: ldc for on semiconductor european support german phone : (+1) 3033087140 (monfri 2:30pm to 7:00pm cet) email : onlitgerman@hibbertco.com french phone : (+1) 3033087141 (monfri 2:00pm to 7:00pm cet) email : onlitfrench@hibbertco.com english phone : (+1) 3033087142 (monfri 12:00pm to 5:00pm gmt) email : onlit@hibbertco.com european tollfree access*: 0080044223781 *available from germany, france, italy, uk, ireland
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